Film bulk acoustic-wave resonator (FBAR), filter implemented by FBARs and method for manufacturing FBAR
US7463117B2 · kind B2 · utility
30Cited by
2References
11Claims
0Family size
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Key dates
| Filing date | Jun 30, 2005 |
| Grant date | Dec 9, 2008 |
| Priority date | — |
| Expiry date | Dec 6, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2003/023
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A film bulk acoustic-wave resonator encompasses a substrate having a cavity; a bottom electrode partially fixed to the substrate, part of the bottom electrode is mechanically suspended above the cavity; a piezoelectric layer provided on the bottom electrode; and a top electrode provided on the piezoelectric layer having crystal axes oriented along a thickness direction of the piezoelectric layer, a full width at half maximum of the distribution of the orientations of the crystal axes is smaller than or equal to about six degrees.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.