Multi-exposure lithography system providing increased overlay accuracy
US7463333B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 19, 2005 |
| Grant date | Dec 9, 2008 |
| Priority date | — |
| Expiry date | Dec 21, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70466
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Multi-exposure lithography systems are provided for improved overlay accuracy. In one aspect, a method for multi-exposure lithography operates by determining overlay parameters corresponding to each of a plurality of sub-layouts, inputting the overlay parameters into an exposure system, exposing each sub-layout to photoresist on a wafer by using the exposure system, wherein prior to the exposure process for a given sub-layout, a correction process is performed for the sub-layout using a corresponding overlay parameter to correct an overlay of the sub-layout, and developing the exposed photoresist after exposing all of the sub-layouts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.