Photolithographic mask having half tone main features and perpendicular half tone assist features

US7465522B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Lothar Bauch · Dresden, DE
• Gerhard Kunkel · Radebeul, DE
• Hermann Sachse · Dresden, DE
• Helmut Wurzer · Dresden, DE

Key dates

• Filing date: Jul 30, 2002
• Grant date: Dec 16, 2008
• Expiry date: Jun 14, 2024

Classification

• Technology area (CPC G): Physics
• CPC primary: G03F1/30
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A photolithographic mask having half tone main features and perpendicular half tone assist features. One embodiment provides for the exposure of radiation-sensitive resist layers on semiconductor substrates. The mask has at least one radiation-transmissive substrate and at least one half-tone layer. The half-tone layer is used to provide main features, the main features being formed in such a way that the pattern formed by the main features is transferred into the resist layer when irradiated, and the half-tone layer is also used to provide assist features, the assist features being formed substantially perpendicular to the main features in such a way that the pattern formed by the assist features is not transferred into the resist layer when irradiated.