Fabricating method for thin film transistor substrate and thin film transistor substrate using the same
US7465612B2 · kind B2 · utility
5Cited by
2References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2005 |
| Grant date | Dec 16, 2008 |
| Priority date | — |
| Expiry date | Mar 30, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/938
Abstract
A thin film transistor substrate and its fabrication method are discussed. According to an embodiment, the fabricating method of a thin film transistor substrate includes forming a gate electrode on a substrate; forming a gate insulating film on the gate electrode, the gate insulating film having a groove in an area corresponding to an area where an active layer of a thin film transistor is to be formed; forming the active layer of the thin film transistor by use of a nanowire in the groove of the gate insulating film; and forming a source electrode and a drain electrode on the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.