Method of forming etching mask
US7465672B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 2, 2006 |
| Grant date | Dec 16, 2008 |
| Priority date | — |
| Expiry date | Nov 2, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method of forming an etching mask. According to the present invention, there is provided a method of forming an etching mask, comprising the steps of: depositing a hard mask film containing silicon on a substrate; depositing a photoresist on the hard mask film; patterning the photoresist; and etching the hard mask film using the photoresist pattern as an mask and using an etching gas including a CHxFy(x, y=1, 2, 3) gas. At this time, an etch selectivity of the hard mask film to the photoresist pattern can be increased using a mixed gas including CH2F2 and H2 gases when etching the hard mask film under the photoresist pattern used in a wavelength of 193 nm or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.