Method for forming dielectric film to improve adhesion of low-k film
US7465676B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 24, 2006 |
| Grant date | Dec 16, 2008 |
| Priority date | — |
| Expiry date | Oct 7, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76843
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure having improved adhesion between a low-k dielectric layer and the underlying layer and a method for forming the same are provided. The semiconductor substrate includes a dielectric layer over a semiconductor substrate, an adhesion layer on the dielectric layer wherein the adhesion layer comprises a transition sub-layer over an initial sub-layer, and wherein the transition sub-layer has a composition that gradually changes from a lower portion to an upper portion. A low-k dielectric layer is formed on the adhesion layer. Damascene openings are formed in the low-k dielectric layer. A top portion of the transition sub-layer has a composition substantially similar to a composition of the low-k dielectric layer. A bottom portion of the transition sub-layer has a composition substantially similar to a composition of the initial sub-layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.