Power semiconductor device including insulated source electrodes inside trenches
US7465986B2 · kind B2 · utility
13Cited by
16References
34Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2005 |
| Grant date | Dec 16, 2008 |
| Priority date | — |
| Expiry date | Apr 1, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A power semiconductor device includes a plurality of trenches formed within a semiconductor body, each trench including one or more electrodes formed therein. In particular, according to embodiments of the invention, the plurality of trenches of a semiconductor device may include one or more gate electrodes, may include one or more gate electrodes or one or more source electrodes, or may include a combination of both gate and source electrodes formed therein. The trenches and electrodes may have varying depths within the semiconductor body.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.