Field electrode trench transistor structure with voltage divider

US7465987B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Joachim Krumrey · Eisenlohrsweg, AT
• Franz Hirler · Isen, DE
• Walter Rieger · Arnoldstein, AT

Key dates

• Filing date: Aug 31, 2006
• Grant date: Dec 16, 2008
• Expiry date: Sep 10, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/148

Abstract

A trench transistor structure having a field electrode arrangement formed in trenches is disclosed. In one embodiment, the field electrode arrangement is conductively connected to subvoltage taps of a voltage divider for the purpose of stabilizing the potentials on a longer time scale than dynamic charge reversal processes.