Semiconductor device having super junction structure
US7465990B2 · kind B2 · utility
4Cited by
3References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 3, 2006 |
| Grant date | Dec 16, 2008 |
| Priority date | — |
| Expiry date | Apr 22, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/252
Abstract
A super junction type semiconductor device includes a first semiconductor layer of a first conductivity type, a super junction structure, and a second semiconductor layer of a second conductivity type. The thickness of the second semiconductor layer varies such that the thickness in the peripheral region is greater than that in the active region, which is used as a body region. Therefore, a depletion layer in the peripheral region expands sufficiently in the thickened portion of the second semiconductor layer as well as in the super junction structure. Thus, the avalanche withstanding capability is improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.