BiCMOS performance enhancement by mechanical uniaxial strain and methods of manufacture
US7466008B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2007 |
| Grant date | Dec 16, 2008 |
| Priority date | — |
| Expiry date | Jul 12, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/401
Abstract
A BiCMOS device with enhanced performance by mechanical uniaxial strain is provided. A first embodiment of the present invention includes an NMOS transistor, a PMOS transistor, and a bipolar transistor formed on different areas of the substrate. A first contact etch stop layer with tensile stress is formed over the NMOS transistor, and a second contact etch stop layer with compressive stress is formed over the PMOS transistor and the bipolar transistor, allowing for an enhancement of each device. Another embodiment has, in addition to the stressed contact etch stop layers, strained channel regions in the PMOS transistor and the NMOS transistor, and a strained base in the BJT.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.