Rectangular semi-conducting support for microelectronics and method for making same
US7466019B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 24, 2005 |
| Grant date | Dec 16, 2008 |
| Priority date | — |
| Expiry date | Nov 24, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The semi-conducting support comprises a graphite substrate having a front surface and a rear surface and at least a first stack arranged on the front surface of the substrate. The first stack successively comprises a single-crystal diamond layer, an electrically insulating oxide layer and a semi-conducting layer. The support can comprise a second stack arranged on the rear surface of the substrate and comprising the same succession of layers as the first stack or comprising a polymer material layer. A thermal connection passing through the first and/or second stacks and connecting the graphite substrate to an external surface of the support enables heat to be removed. The method can comprise production of the semi-conducting layer by molecular bonding of rectangular silicon strips onto the oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.