Semiconductor filter structure and method of manufacture
US7466212B2 · kind B2 · utility
1Cited by
6References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2006 |
| Grant date | Dec 16, 2008 |
| Priority date | — |
| Expiry date | Apr 18, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a split well region of one conductivity type is formed in semiconductor substrate of an opposite conductivity type. The split well region forms one plate of a floating capacitor and an electrode of a transient voltage suppression device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.