Metal chalcogenide composite nano-particles and layers therewith
US7468146B2 · kind B2 · utility
3Cited by
5References
27Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 11, 2003 |
| Grant date | Dec 23, 2008 |
| Priority date | — |
| Expiry date | Feb 5, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/948
Abstract
A metal chalcogenide composite nano-particle comprising a metal capable of forming p-type semiconducting chalcogenide nano-particles and a metal capable of forming n-type semiconducting chalcogenide nano-particles, wherein at least one of the metal chalcogenides has a band-gap between 1.0 and 2.9 eV and the concentration of the metal capable of forming p-type semiconducting chalcogenide nano-particles is at least 5 atomic percent of the metal and is less than 50 atomic percent of the metal; a dispersion thereof; a layer comprising the nano-particles; and a photovoltaic device comprising the layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.