Magnetoresistive device and nonvolatile magnetic memory equipped with the same
US7468542B2 · kind B2 · utility
3Cited by
4References
17Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 27, 2006 |
| Grant date | Dec 23, 2008 |
| Priority date | — |
| Expiry date | Nov 8, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3272
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A fast and very low-power-consuming nonvolatile memory. A nonvolatile magnetic memory includes a high-output tunnel magnetoresistive device, in which spin-transfer torque is used for writing. A tunnel magnetoresistive device has a structure such that a ferromagnetic film of a body-centered cubic structure containing Co, Fe, and B, a MgO insulator film of a rock-salt structure oriented in (100), and a ferromagnetic film are stacked.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.