Internal voltage generators for semiconductor memory device
US7468628B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 16, 2007 |
| Grant date | Dec 23, 2008 |
| Priority date | — |
| Expiry date | Jun 20, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02M1/0041
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An internal voltage generator capable of reducing the variation width in the level of an internal voltage VPP, by performing charge pumping only a predetermined number of times in a period where an oscillator driving signal is at a logic HIGH level, and then stopping the charge pumping operation. The oscillator controller generates an oscillation control signal for stopping an oscillation operation of a ring oscillator by using an output signal of a level detector and an output signal of the ring oscillator. The ring oscillator does not generate an oscillation signal at a predetermined time point where an output signal of the level detector is at a HIGH level in response to the oscillation control signal. The charge pump circuit generates an internal voltage by performing a charge pumping operation only predetermined times in response to the oscillation signal, and then stopping the charge pumping operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.