Method for providing a temporary, deep shunt on wafer structures for electrostatic discharge protection during processing
US7469466B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 4, 2005 |
| Grant date | Dec 30, 2008 |
| Priority date | — |
| Expiry date | Feb 17, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49156
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method of temporarily protecting an electrically sensitive component from damage due to electrostatic discharge is disclosed. The method includes the steps of defining a first shield that forms a first lead for both a component and a shunt; depositing a conductive material on the first shield to form the component and the shunt; defining an edge of the component and an edge of the shunt together in a single masking step; refilling with insulation adjacent the component and the shunt to their respective edges on the first shield; defining a second shield on both the component and the shunt that forms a second lead for both the component and the shunt to form a shunted assembly that electrically protects the component; lapping the shunted assembly; and removing a portion of the shunted assembly to remove the shunt and form an electrical open for an unshunted assembly.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.