Non-thermal process for forming porous low dielectric constant films

US7470454B2 · kind B2 · utility

Assignee

• AIR PRODUCTS AND CHEMICALS, INC. · US

Inventors

• Aaron Scott Lukas · Washington, US
• Mark Leonard O'Neill · San Marcos, US
• Mark Daniel Bitner · Nazareth, US
• Jean Louise Vincent · Bethlehem, US
• Raymond Nicholas Vrtis · Allentown, US
• Eugene Joseph Karwacki, Jr. · Orefield, US

Key dates

• Filing date: Jul 21, 2003
• Grant date: Dec 30, 2008
• Expiry date: Jul 21, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02274
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In certain embodiments of the invention, there is provided a low-temperature process to remove at least a portion of at least one pore-forming material within a composite film thereby forming a porous film. The pore-forming material may be removed via exposure to at least one energy source, preferably an ultraviolet light source, in a non-oxidizing atmosphere.