System and method for forming multi-component dielectric films
US7470470B2 · kind B2 · utility
8Cited by
26References
4Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 21, 2004 |
| Grant date | Dec 30, 2008 |
| Priority date | — |
| Expiry date | Nov 19, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02337
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides systems and methods for mixing precursors such that a mixture of precursors are present together in a chamber during a single pulse step in an atomic layer deposition (ALD) process to form a multi-component film. The precursors are comprised of at least one different chemical component, and such different components will form a mono-layer to produce a multi-component film. In a further aspect of the present invention, a dielectric film having a composition gradient is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.