Semiconductor device and method for manufacturing the same
US7470609B2 · kind B2 · utility
2Cited by
16References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 26, 2007 |
| Grant date | Dec 30, 2008 |
| Priority date | — |
| Expiry date | Feb 5, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device including a multilevel wiring with a small interwiring capacitance is provided by comprising a wiring, a conductive film formed on an upper surface of the wiring to prevent diffusion of a wiring material, and an insulating film which is constituted of low dielectric constant insulating films stacked to form at least two layers, an interface thereof being positioned in a side face of the wiring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.