Microelectronic device with mixed dielectric
US7470863B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 24, 2006 |
| Grant date | Dec 30, 2008 |
| Priority date | — |
| Expiry date | Oct 12, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/09581
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A microelectronic device and method of making the microelectronic device is provided. A dielectric substrate having first and second surfaces is provided. A first component, located in the dielectric substrate between the first and second surfaces of the dielectric substrate is formed. The first component includes a first interface and a second interface. A second component located in the dielectric substrate and spaced relative to the first component is formed, and a first low permittivity material is formed having a predetermined thickness and a first and second surface, the first surface of the low permittivity material is adjacent to or in contact with a first portion of the first interface of the first component. The first low permittivity material substantially reduces capacitive parasitics of the first component, resulting in a substantially higher characteristic impedance of the first component during operation of the microelectronic device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.