Power IGBT with increased robustness

US7470952B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Holger Ruething · Munich, DE
• Hans-Joachim Schulze · Taufkirchen, DE
• Manfred Pfaffenlehner · Birkenfeld, DE

Key dates

• Filing date: Nov 9, 2006
• Grant date: Dec 30, 2008
• Expiry date: Nov 9, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/152

Abstract

A power IGBT includes a semiconductor body having an emitter zone of a first conduction type and a drift zone of a second conduction type proximate to the emitter zone. The IGBT further includes a cell array, each transistor cell of the array having a source zone, a body zone disposed between the source zone and the drift zone, the body zone and source zone short-circuited, and a gate electrode configured to be insulated with respect to the source zone and the body zone. The cell array has a first cell array section with a first cell density and a second cell array section with a second cell density that is lower than the first cell density. The emitter zone has a lower emitter efficiency in a region corresponding to the second cell array section than in a region corresponding to the first cell array section.