High-voltage power semiconductor device with body regions of alternating conductivity and decreasing thickness
US7470960B1 · kind B1 · utility
13Cited by
8References
4Claims
0Family size
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Key dates
| Filing date | Oct 24, 2000 |
| Grant date | Dec 30, 2008 |
| Priority date | — |
| Expiry date | May 28, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A semiconductor device which eases an electric field at a drift portion without a reduction in impurity concentrations, and has a high withstand voltage and a low on-resistance, wherein, when a rated voltage is applied between a body region and a drain region formed on an insulating semiconductor substrate, the thicknesses of two, p-type and n-type, drift regions sandwiched between the body and drain regions are selected so as to completely deplete the drift regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.