Wide dynamic range and high speed voltage mode sensing for a multilevel digital non-volatile memory
US7471581B2 · kind B2 · utility
78Cited by
94References
31Claims
0Family size
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Key dates
| Filing date | Mar 22, 2007 |
| Grant date | Dec 30, 2008 |
| Priority date | — |
| Expiry date | Apr 22, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5634
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A high speed voltage mode sensing is provided for a digital multibit non-volatile memory integrated system. An embodiment has a local source follower stage followed by a high speed common source stage. Another embodiment has a local source follower stage followed by a high speed source follower stage. Another embodiment has a common source stage followed by a source follower. An auto zeroing scheme is used. A capacitor sensing scheme is used. Multilevel parallel operation is described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.