Method for growing silicon single crystal
US7473314B2 · kind B2 · utility
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5References
8Claims
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Key dates
| Filing date | Mar 28, 2006 |
| Grant date | Jan 6, 2009 |
| Priority date | — |
| Expiry date | Apr 11, 2026 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/06
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A silicon single crystal is grown using the Czochralski method. During the crystal growth, a thermal stress is applied to at least a portion of the silicon single crystal. A gaseous substance containing hydrogen atoms is used as an atmospheric gas for growing the crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.