Semiconductor device having body contact through gate and method of fabricating the same
US7473590B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 7, 2005 |
| Grant date | Jan 6, 2009 |
| Priority date | — |
| Expiry date | Jul 14, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to an embodiment of the invention, a lower transistor is formed on a semiconductor substrate, and an upper thin film transistor is formed on the lower transistor. A body contact plug is formed to penetrate an upper gate electrode of the upper thin film transistor and a body pattern, and to electrically connect with a lower gate electrode of the lower transistor. The body contact plug uses a contact hole to apply an electrical signal to the upper gate electrode of the upper thin film transistor, so additional volume is not necessary. Since the upper gate electrode is electrically connected to the body pattern through the body contact plug, the floating body effect of the upper thin film transistor can be improved. Therefore, a semiconductor device is provided with the high performance required to realize a highly-integrated semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.