Low temperature process and structures for polycide power MOSFET with ultra-shallow source
US7473604B2 · kind B2 · utility
1Cited by
12References
13Claims
0Family size
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Key dates
| Filing date | Jan 12, 2007 |
| Grant date | Jan 6, 2009 |
| Priority date | — |
| Expiry date | Jul 11, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
Abstract
A trench type power semiconductor device includes proud gate electrodes that extend out of the trenches and above the surface of the semiconductor body. These proud gate electrodes allow for making ultra-shallow source regions within the semiconductor body using, for example, a low temperature source drive. In addition, a method for manufacturing the trench type power semiconductor device includes a low temperature process flow once the gate electrodes are formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.