Methods of forming non-volatile memory cells including fin structures
US7473611B2 · kind B2 · utility
236Cited by
13References
42Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 28, 2004 |
| Grant date | Jan 6, 2009 |
| Priority date | — |
| Expiry date | Dec 14, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6213
Abstract
A method of forming a non-volatile memory device may include forming a fin protruding from a substrate, forming a tunnel insulating layer on portions of the fin, and forming a floating gate on the tunnel insulting layer so that the tunnel insulating layer is between the floating gate and the fin. A dielectric layer may be formed on the floating gate so that the floating gate is between the dielectric layer and the fin, and a control gate electrode may be formed on the dielectric layer so that the dielectric layer is between the control gate and the fin. Related devices are also discussed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.