Method for preparing a sintered body of aluminum nitride
US7473661B2 · kind B2 · utility
3Cited by
1References
5Claims
0Family size
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Key dates
| Filing date | Jan 18, 2008 |
| Grant date | Jan 6, 2009 |
| Priority date | — |
| Expiry date | Jan 18, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6831
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Disclosed is a method for preparing a high dense aluminum nitride (AlN) sintered body. The method includes the steps of preparing powders for the AlN sintered body comprising Y2O3 of 0.1 to 15 wt %, TiO2 of 0.01 to 5 wt % and MgO of 0.1 to 10 wt %, and obtaining the AlN sintered body with a volume resistivity of 1×1015 Ωcm or more at a normal temperature and a relative density of 99% or more. The sintered body is obtained by sintering the powders and then cooling the sintered powders or sintering the powders and then cooling the sintered powders with annealing the sintered powders during the cooling.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.