Device for monitoring ionizing radiation in silicon-on insulator integrated circuits
US7473904B2 · kind B2 · utility
2Cited by
8References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 11, 2008 |
| Grant date | Jan 6, 2009 |
| Priority date | — |
| Expiry date | Feb 11, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01T1/244
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
A device and system for monitoring ionizing radiation. The device including: a diode formed in a silicon layer below an oxide layer buried below a surface of a silicon substrate; and a cathode of the diode coupled to a precharged node of a clocked logic circuit, an output state of the clocked logic circuit responsive a change in state of the precharged node, a state of the precharged node responsive to ionizing radiation induced charge collected by a depletion region of the diode and collected in the cathode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.