Semiconductor device
US7474584B2 · kind B2 · utility
15Cited by
18References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 2, 2007 |
| Grant date | Jan 6, 2009 |
| Priority date | — |
| Expiry date | Aug 2, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/2227
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A logic circuit in a system LSI is provided with a power switch so as to cut off the switch at the time of standby, reducing leakage current. At the same time, an SRAM circuit of the system LSI controls a substrate bias to reduce leakage current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.