Removable spacer
US7476610B2 · kind B2 · utility
1Cited by
8References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 10, 2006 |
| Grant date | Jan 13, 2009 |
| Priority date | — |
| Expiry date | Jul 13, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
Abstract
A method for forming semiconductor devices is provided. A gate stack is formed over a surface of a substrate. A plurality of cycles for forming polymer spacers on sides of the gate stack is provided, where each cycle comprises providing a deposition phase that deposits material on the sides of the polymer spacer and over the surface of the substrate, and providing a cleaning phase that removes polymer over the surface of the substrate and shapes a profile of the deposited material. Dopant is implanted into the substrate using the polymer spacers as a dopant mask. The polymer spacers are removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.