Patent · US Expired

Method for producing a semiconductor component and a semiconductor component produced according to the method

US7479232B2 · kind B2 · utility

4Cited by

6References

29Claims

0Family size

Assignee

Robert Bosch GmbH · DE

Inventors

Hubert Benzel · Neckartenzlingen, DE
Heribert Weber · Leverkusen, DE
Hans Artmann · Magstadt, DE
Frank Schaefer · Lörrach, DE

Key dates

Filing date	Sep 6, 2005
Grant date	Jan 20, 2009
Priority date	—
Expiry date	Sep 6, 2025

Classification

Technology area (CPC B)Performing Operations; Transporting
CPC primaryB81C2201/0115
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A method is for producing a semiconductor component, e.g., a multilayer semiconductor element, e.g., a micromechanical component, e.g., a pressure sensor, having a semiconductor substrate, e.g., made of silicon, and a semiconductor component produced according to the method. To reduce the production cost of such a semiconductor component, in a first step a first porous layer is produced in the semiconductor component, and in a second step a hollow or cavity is produced under or from the first porous layer in the semiconductor component, with the hollow or cavity capable of being provided with an external access opening.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.