Method to improve performance of a bipolar device using an amorphizing implant
US7479438B2 · kind B2 · utility
0Cited by
3References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2006 |
| Grant date | Jan 20, 2009 |
| Priority date | — |
| Expiry date | Aug 23, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0109
Abstract
The invention, in one aspect, provides a semiconductor device that comprises a bipolar transistor located over and within a semiconductor substrate, a collector located within a tub of the bipolar transistor and having an amorphous region formed at least partially therein, a base located over the collector, and an emitter located over the base. There is also provided a method of fabricating the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.