Nace Rossi
26Patents
4h-index
14Co-inventors
52Inventor score
Filing activity: Feb 13, 2004 → Aug 31, 2011
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7982286B2 | Method to improve metal defects in semiconductor device fabrication | Electricity | 10 | Active |
| US7557010B2 | Method to improve writer leakage in a SiGe bipolar device | Emerging Cross-Sectional Technologies | 9 | Active |
| US7141486B1 | Shallow trench isolation structures comprising a graded doped sacrificial silicon dioxide material and a method for forming shallow trench isolation structures | Electricity | 7 | Expired |
| US7279393B2 | Trench isolation structure and method of manufacture therefor | Electricity | 4 | Expired |
| US7906407B2 | Shallow trench isolation structures and a method for forming shallow trench isolation structures | Electricity | 4 | Active |
| US7247556B2 | Control of wafer warpage during backend processing | Electricity | 4 | Expired |
| US8372723B2 | Bipolar device having buried contacts | Electricity | 4 | Active |
| US8049282B2 | Bipolar device having buried contacts | Electricity | 4 | Active |
| US7923340B2 | Method to reduce collector resistance of a bipolar transistor and integration into a standard CMOS flow | Electricity | 4 | Active |
| US7439119B2 | Thermally stable BiCMOS fabrication method and bipolar junction transistors formed according to the method | Electricity | 2 | Active |
| US7514336B2 | Robust shallow trench isolation structures and a method for forming shallow trench isolation structures | Electricity | 1 | Active |
| US7005724B2 | Semiconductor device and a method of manufacture therefor | Electricity | 1 | Expired |
| US7675179B2 | Device and method to eliminate shorting induced by via to metal misalignment | Emerging Cross-Sectional Technologies | 0 | Active |
| US8084313B2 | Method for forming a bipolar junction transistor and a metal oxide semiconductor field effect transistor | Electricity | 0 | Active |
| US8367497B2 | Method to reduce trench capacitor leakage for random access memory device | General | 0 | Revoked |
| US8106480B2 | Bipolar device having improved capacitance | Electricity | 0 | Active |
| US7666750B2 | Bipolar device having improved capacitance | Electricity | 0 | Active |
| US7456061B2 | Method to reduce boron penetration in a SiGe bipolar device | Electricity | 0 | Active |
| US8685861B2 | Integrated circuit system with contact distribution film | Electricity | 0 | Active |
| US7898038B2 | Method to improve writer leakage in SiGe bipolar device | Emerging Cross-Sectional Technologies | 0 | Active |
| US8872311B2 | Semiconductor device and a method of manufacture therefor | Electricity | 0 | Active |
| US7479438B2 | Method to improve performance of a bipolar device using an amorphizing implant | Electricity | 0 | Active |
| US7235489B2 | Device and method to eliminate shorting induced by via to metal misalignment | Emerging Cross-Sectional Technologies | 0 | Expired |
| US8022481B2 | Robust shallow trench isolation structures and a method for forming shallow trench isolation structures | Electricity | 0 | Active |
| US7811944B2 | Semiconductor device and a method of manufacture therefor | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.