Reducing oxide loss when using fluoride chemistries to remove post-etch residues in semiconductor processing
US7479474B2 · kind B2 · utility
9Cited by
17References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 3, 2004 |
| Grant date | Jan 20, 2009 |
| Priority date | — |
| Expiry date | Oct 22, 2024 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A novel cleaning composition used for post-etch resist residue removal is disclosed. In contrast to the conventional cleaning solutions based on fluoride chemistries, the present invention can significantly reduce the oxide loss resulting from the exfoliation, while still providing an excellent cleaning efficiency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.