Electrically-pumped (Ga,In,Al)N vertical-cavity surface-emitting laser

US7480322B2 · kind B2 · utility

Assignee

• The Regents of the University of California · US

Inventors

• Daniel F. Feezell · Albuquerque, US
• Daniel A. Cohen · Los Gatos, US
• Robert M. Farrell · Goleta, US
• Masahiro Ishida · Tokyo, JP
• Shuji Nakamura · Goleta, US

Key dates

• Filing date: May 15, 2007
• Grant date: Jan 20, 2009
• Expiry date: May 15, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/32341
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A vertical-cavity surface-emitting laser (VCSEL) comprising a low-loss thin metal contact and current spreading layer within the optical cavity that provides for improved ohmic contact and lateral current distribution, a substrate including a plano-concave optical cavity, a (Ga,In,Al)N multiple quantum well (MQW) active region contained within the optical cavity that generates light when injected by an electrical current, and an integrated micromirror fabricated onto the substrate that provides for optical mode control of the light generated by the active region. A relatively simple process is used to fabricate the VCSEL.