Optimized photomasks for photolithography
US7480889B2 · kind B2 · utility
40Cited by
33References
11Claims
0Family size
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Key dates
| Filing date | Apr 6, 2003 |
| Grant date | Jan 20, 2009 |
| Priority date | — |
| Expiry date | Apr 6, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P90/02
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Photomask patterns are represented using contours defined by level-set functions. Given target pattern, contours are optimized such that defined photomask, when used in photolithographic process, prints wafer pattern faithful to target pattern. Optimization utilizes “merit function” for encoding aspects of photolithographic process, preferences relating to resulting pattern (e.g. restriction to rectilinear patterns), robustness against process variations, as well as restrictions imposed relating to practical and economic manufacturability of photomasks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.