Method for forming a thin film
US7481882B2 · kind B2 · utility
31Cited by
22References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 23, 2002 |
| Grant date | Jan 27, 2009 |
| Priority date | — |
| Expiry date | Apr 23, 2022 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/405
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for forming a film includes forming the film on a substrate, followed by performing a first annealing of the film at a temperature lower than a crystallization temperature of the film. A second annealing of the film is performed at a temperature higher that the crystallization temperature. Forming the film and the first annealing of the film are performed in situ in a chamber. Alternatively, the first and second annealing are performed in situ in an apparatus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.