Structure and method for a sidewall SONOS memory device
US7482236B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2006 |
| Grant date | Jan 27, 2009 |
| Priority date | — |
| Expiry date | Feb 24, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/954
Abstract
A gate stack is formed on a substrate. The gate stack has a sidewall. An oxide-nitride-oxide material is deposited on the gate stack. Portions of the oxide-nitride-oxide material are removed to form an oxide-nitride-oxide structure. The oxide-nitride-oxide structure has a generally L-shaped cross-section with a vertical portion along at least part of the gate stack sidewall and a horizontal portion along the substrate. A top oxide material is deposited over the substrate. A silicon nitride spacer material is deposited over the top oxide material. Portions of the top oxide material and the silicon nitride spacer material are removed to form a silicon nitride spacer separated from the oxide-nitride-oxide stack by the top oxide material. Source/drain regions are formed in the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.