Method for forming dielectric or metallic films

US7482286B2 · kind B2 · utility

Assignee

• L'Air Liquide, Société Anonyme à Directoire et Conseil de Surveillance pour l'Étude et l'Exploitation des Procédés Georges Claude · FR

Inventors

• Ashutosh Misra · Dallas, US
• Matthew Fisher · Allen, US
• Benjamin Jurcik · Paris, FR
• Christian Dussarrat · Tokyo, JP
• Eri Tsukada · Tokyo, JP
• Jean-Marc Girard · Versailles, FR

Key dates

• Filing date: Feb 24, 2005
• Grant date: Jan 27, 2009
• Expiry date: Feb 24, 2025

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/907
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Method for producing a metal silicon (oxy)nitride by introducing a carbon-free silicon source (for example, (SiH3)3N), a metal precursor with the general formula MXn (for example, Hf(NEt2)4), and an oxidizing agent (for example, O2) into a CVD chamber and reacting same at the surface of a substrate. MsiN, MSIo and/or MSiON films may be obtained. These films are useful are useful as high k dielectrics films.