Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same
US7482616B2 · kind B2 · utility
29Cited by
18References
67Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 27, 2005 |
| Grant date | Jan 27, 2009 |
| Priority date | — |
| Expiry date | Dec 17, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
Abstract
In one embodiment, a phase-change memory device has an oxidation barrier layer to protect against memory cell contamination or oxidation and a method of manufacturing the same. In one embodiment, a semiconductor memory device comprises a molding layer overlying a semiconductor substrate. The molding layer has a protrusion portion vertically extending from a top surface thereof. The device further includes a phase-changeable material pattern adjacent the protrusion portion and a lower electrode electrically connected to the phase-changeable material pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.