ZnO group epitaxial semiconductor device and its manufacture
US7482618B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jan 6, 2005 |
| Grant date | Jan 27, 2009 |
| Priority date | — |
| Expiry date | Jan 6, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/327
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device includes the steps of: (a) preparing a non-polar single crystal substrate; (b) epitaxially growing an MgO layer on the non-polar single crystal substrate to a thickness of 3 nm or thicker to have rocksalt structure at a substrate temperature of 500° C. to 800° C.; (c) growing on the MgO layer a low temperature growth layer made of ZnO group material at a substrate temperature of 500° C. or lower; (d) annealing the low temperature growth layer above the substrate at a temperature of 700° C. or higher; and (e) epitaxially growing a high temperature growth layer of ZnO group material on the annealed low temperature growth layer at a temperature of 600° C. or higher.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.