Crystalline III-V nitride films on refractory metal substrates
US7482674B1 · kind B1 · utility
7Cited by
3References
23Claims
0Family size
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Key dates
| Filing date | Dec 17, 2007 |
| Grant date | Jan 27, 2009 |
| Priority date | — |
| Expiry date | Dec 17, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An article of manufacture having a substrate having a top surface and a first layer on the top surface. The top surface contains titanium carbide, vanadium carbide, zirconium carbide, niobium carbide, hafnium carbide, tantalum carbide, tungsten carbide, chromium nitride, molybdenum nitride, tungsten nitride, titanium nitride, vanadium nitride, zirconium nitride, or a combination thereof. The first layer contains one or more group III-V metal nitrides.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.