Patent · US Active

Method for improving the thermal characteristics of semiconductor memory cells

US7483293B2 · kind B2 · utility

9Cited by

1References

19Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Cay-Uwe Pinnow · Birkenfeld, DE
Klaus-Dieter Ufert · Unterschleißheim, DE

Key dates

Filing date	Oct 28, 2005
Grant date	Jan 27, 2009
Priority date	—
Expiry date	Oct 30, 2026

Classification

Technology area (CPC H)Electricity
CPC primaryH10N70/8825
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A non-volatile, resistively switching memory cell includes a first electrode, a second electrode and a solid electrolyte, which is arranged such that it makes contact between the electrodes, and is composed of an amorphous or partially amorphous, non-oxidic matrix and a metal which is distributed in the amorphous or partially amorphous, non-oxidic matrix and whose cations migrate to the cathode in the amorphous or partially amorphous, non-oxidic matrix under the influence of an electrical voltage, wherein the solid electrolyte contains one or more further metallic materials for stabilization of the amorphous state of the matrix.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.