Measurement of properties of thin films on sidewalls
US7483513B2 · kind B2 · utility
23Cited by
18References
40Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 17, 2006 |
| Grant date | Jan 27, 2009 |
| Priority date | — |
| Expiry date | Mar 29, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N23/20
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for X-ray analysis of a sample includes directing a beam of X-rays to impinge on an area of a periodic feature on a surface of the sample and receiving the X-rays scattered from the surface in a reflection mode so as to detect a spectrum of diffraction in the scattered X-rays as a function of azimuth. The spectrum of diffraction is analyzed in order to determine a dimension of the feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.