Integrated carbon nanotube sensors

US7484423B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Mark C. Hakey · Saint Albans, US
• Mark E. Masters · South Burlington, US
• Leah Pastel · Saint Johnsbury Center, US
• David P. Vallett · Saint Albans, US

Key dates

• Filing date: Apr 4, 2007
• Grant date: Feb 3, 2009
• Expiry date: Apr 4, 2027

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S977/765
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A method and structure for an integrated circuit comprising a first transistor and an embedded carbon nanotube field effect transistor (CNT FET) proximate to the first transistor, wherein the CNT FET is dimensioned smaller than the first transistor. The CNT FET is adapted to sense signals from the first transistor, wherein the signals comprise any of temperature, voltage, current, electric field, and magnetic field signals. Moreover, the CNT FET is adapted to measure stress and strain in the integrated circuit, wherein the stress and strain comprise any of mechanical and thermal stress and strain. Additionally, the CNT FET is adapted to detect defective circuits within the integrated circuit.