Group III-V crystal
US7485484B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 12, 2007 |
| Grant date | Feb 3, 2009 |
| Priority date | — |
| Expiry date | Oct 12, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12681
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Favorable-quality III-V crystals are easily obtained at low cost without causing cracks, even when using a variety of substrates. The III-V crystals are obtained by manufacturing method characterized in including: a step of depositing a metal film (2) on a substrate (1); a step of heat-treating the metal film (2) in an atmosphere in which a patterning compound is present; and a step of growing a group III-V crystal (4) on the metal film after the heat treatment. Alternatively, the III-V crystal manufacturing method is characterized in including: a step of growing a group III-V compound buffer film on the metal film after the heat treatment; and a step of growing a group III-V crystal on the group III-V compound buffer film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.