Method of manufacturing a body-contacted finfet

US7485520B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Huilong Zhu · Poughkeepsie, US
• Thomas W. Dyer · Pleasant Valley, US
• Jack A. Mandelman · Stormville, US
• Werner Rausch · Hopewell Junction, US

Key dates

• Filing date: Jul 5, 2007
• Grant date: Feb 3, 2009
• Expiry date: Jul 26, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/62

Abstract

A silicon containing fin is formed on a semiconductor substrate. A silicon oxide layer is formed around the bottom of the silicon containing fin. A gate dielectric is formed on the silicon containing fin followed by formation of a gate electrode. While protecting the portion of the semiconductor fin around the channel, a bottom portion of the silicon containing semiconductor fin is etched by a isotropic etch leaving a body strap between the channel of a finFET on the silicon containing fin and an underlying semiconductor layer underneath the silicon oxide layer. The fin may comprise a stack of inhomogeneous layers in which a bottom layer is etched selectively to a top semiconductor layer. Alternatively, the fin may comprise a homogeneous semiconductor material and the silicon containing fin may be protected by dielectric films on the sidewalls and top surfaces of the silicon containing fin.