Abrupt junction formation by atomic layer epitaxy of in situ delta doped dopant diffusion barriers
US7485536B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2005 |
| Grant date | Feb 3, 2009 |
| Priority date | — |
| Expiry date | Dec 30, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
A method including forming a channel region between source and drain regions in a substrate, the channel region including a first dopant profile; and forming a barrier layer between the channel region and a well of the substrate, the barrier layer including a second dopant profile different from the first dopant profile. An apparatus including a gate electrode on a substrate; source and drain regions formed in the substrate and separated by a channel region; and a barrier layer between a well of the substrate and the channel region, the barrier layer including a dopant profile different than a dopant profile of the channel region and different than a dopant profile of the well. A system including a computing device including a microprocessor, the microprocessor including a plurality of transistor devices formed in a substrate, each of the plurality of transistor devices including a gate electrode on the substrate; source and drain regions formed in the substrate and separated by a channel region; and a barrier layer between a well of the substrate and the channel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.