High performance SiGe HBT with arsenic atomic layer doping
US7485538B1 · kind B1 · utility
3Cited by
1References
21Claims
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Key dates
| Filing date | Mar 27, 2006 |
| Grant date | Feb 3, 2009 |
| Priority date | — |
| Expiry date | Sep 5, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/832
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A base structure for high performance Silicon Germanium (SiGe) based heterojunction bipolar transistors (HBTs) with arsenic atomic layer doping (ALD) is disclosed. The ALD process subjects the base substrate to nitrogen gas or hydrogen gas (in ambient temperature approximately equal to 500 degrees Celsius) and provides an additional SiGe spacer layer. The surface of the final silicon cap layer is preferably etched to remove most of the arsenic. The resulting SiGe HBT with an arsenic ALD layer is less sensitive to process temperature and exposure times, and exhibits lower dopant segregation and sharper base profiles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.